https://simple.wikipedia.org/w/index.php?title=Electrical_impedance&oldid=8372431, Creative Commons Attribution/Share-Alike License. If these scatterers are near the interface, the complexity of the problem increases due to the existence of crystal defects and disorders. These equations apply only to silicon, and only under low field. They are related by 1 m2/(Vs) = 104 cm2/(Vs). j Here A 1/4 wavelength is usually represented with the imaginary number "j", which is also equivalent to a 90 degree shift. The inductors association in series and parallel is equal to the resistors and the total inductance is calculated in the same way. p Optical or high-energy acoustic phonons can also cause intervalley or interband scattering, which means that scattering is not limited within single valley. An inductor typically consists of an insulated wire wound into a coil.. 10 v Calculate the capacitance require to produce a series resonance condition, and the voltages generated across both the inductor and the capacitor at the point of resonance. Conductivity is proportional to the product of mobility and carrier concentration. {\displaystyle \Omega } the resistance is caused by the collisions of the electrons with the atoms inside the resistors. T What is Voltage? [20], With increasing temperature, phonon concentration increases and causes increased scattering. I {\displaystyle P_{0}} V , depends on their separation in space This is unusual; increasing the electric field almost always increases the drift velocity, or else leaves it unchanged. L This article is about the mobility for electrons and holes in metals and semiconductors. In solid-state physics, the electron mobility characterises how quickly an electron can move through a metal or semiconductor when pulled by an electric field.There is an analogous quantity for holes, called hole mobility.The term carrier mobility refers in general to both electron and hole mobility.. Electron and hole mobility are special cases of electrical mobility of charged particles The amount of deflection depends on the speed of the carrier and its proximity to the ion. The two main ways to write an impedance are: 0 {\displaystyle E_{\text{A}}} The same classification is used for all ages from 16 years. These are only approximate values. In silicon (Si) the electron mobility is of the order of 1,000, in germanium around 4,000, and in gallium arsenide up to 10,000cm2/ (Vs). Long range and nonlinearity of the Coulomb potential governing interactions between electrons make these interactions difficult to deal with. The result of the measurement is called the "Hall mobility" (meaning "mobility inferred from a Hall-effect measurement"). As indicated by the formulas above, the impedance varies depending on the frequency, for example, at zero Hertz, or DC, the impedance of the inductor is zero, the same as a short-circuit, and the impedance of the capacitor is infinite, the same as an open-circuit. , In this technique,[28] for each fixed gate voltage VGS, the drain-source voltage VDS is increased until the current ID saturates. 3.The total charge Q supplied by the battery is divided among the various capacitors.Hence: Q = Q1 +Q2 +Q3 Or Q=C1V + C2V+C3V Q=V(C1 +C2+C3) Q/V=C1 +C2+C3 4.We can replace the parallel combination of capacitors with one equivalent capacitor having capacitance Ceq,such that Ceq=C1 + C2 +C3 In case of n capacitors connected in parallel,the equivalent capacitance is given by: Ceq=C1 +C2 +C3++Cn 5.The equivalent capacitance of parallel combination of capacitors is greater than any of the individual capacitances. resistors in series) is a matter of perspective. Calculate the capacitance of an empty parallel-plate capacitor with metal plates with an area of 1.00 m 2, separated by 1.00 mm. a resistor) or an electrical network (e.g. {\displaystyle V=R*I} A signal is partially reflected back where the impedance changes. There is significant change in carrier energy during the scattering process. q T It is on the order of 6106 cm/s for Ge. j f I A precise comparison of the state-of-the-art (SoA) solutions of electronically controllable inductance simulators is provided in Table 1.The following conclusions can be made: (a) only a limited number of complex solutions (example in []) allow the cancellation (neither electronic cancellation) of serial losses, and (b) voltage adjustment of the value of inductance is not a. the Coil-Shortened Dipole Antenna Calculator, The ARRL Antenna Book for Radio Communications, Create a Database Table from a Spreadsheet, Accessing an Extra Channel on your mini VBar, Setting up the Governor on your mini VBar, Calculate Headspeed with your mini VBar Governor. This page was last changed on 1 August 2022, at 06:24. These variations are random and cause fluctuations of the energy levels at the interface, which then causes scattering. , to be for scattering from acoustic phonons The charge carriers in semiconductors are electrons and holes. E The soil heat flux, G, is the energy that is utilized in heating the soil. Bhattacharya, Pallab. def [18] The average free time of flight of a carrier and therefore the relaxation time is inversely proportional to the scattering probability. Electron mobility is almost always specified in units of cm2/(Vs). {\displaystyle T} When capacitors are connected in parallel,the total capacitance is the sum of individual capacitances because the effective plate area increases.The calculation of total parallel capacitance is analogous to the calculation of total series resistance. () determines the imaginary part of the current and is the capacitance. ", "Principles and techniques of blood pressure measurement", "2018 ESC/ESH Guidelines for the management of arterial hypertension", "Nearly half of US adults could now be classified with high blood pressure, under new definitions", "Relationship between waking-sleep blood pressure and catecholamine changes in African-American and European-American women", "Predictive role of the nighttime blood pressure", "Consistency of blood pressure differences between the left and right arms", "Prevalence and clinical implications of the inter-arm blood pressure difference: A systematic review", "Associations between systolic interarm differences in blood pressure and cardiovascular disease outcomes and mortality", "Low blood pressure (hypotension) Causes", "Blood pressure tables for children and adolescents", "Life course trajectories of systolic blood pressure using longitudinal data from eight UK cohorts", "Does blood pressure inevitably rise with age? , where V is the voltage, R is the resistance, and I is the current. The Urbach Energy can be used as a proxy for activation energy in some systems.[25]. Some elastic scattering processes are scattering from acoustic phonons, impurity scattering, piezoelectric scattering, etc. This is the acceleration on the electron between collisions. Sub vx into the expression for y, where RHn is the Hall coefficient for electron, and is defined as, Since However, in a solid, the electron repeatedly scatters off crystal defects, phonons, impurities, etc., so that it loses some energy and changes direction. For the general concept, see, Hall effect measurement setup for electrons, Electric field dependence and velocity saturation, Relation between mobility and scattering time, Time resolved microwave conductivity (TRMC), Doping concentration dependence in heavily-doped silicon. For single-phase: Motor fuse rating = P kW x 1.25 / (pf x V (V)). A switched-mode power supply (switching-mode power supply, switch-mode power supply, switched power supply, SMPS, or switcher) is an electronic power supply that incorporates a switching regulator to convert electrical power efficiently.. Like other power supplies, an SMPS transfers power from a DC or AC source (often mains power, see AC adapter) to DC loads, such MXenes (of the formula M n + 1 X n T x, where M is a transition metal, X is C and/or N, yet not prevailing, contribution of diffusion-limited processes to the total capacitance. , and their separation in energy At any temperature above absolute zero, the vibrating atoms create pressure (acoustic) waves in the crystal, which are termed phonons. MCQs in all electrical engineering subjects including analog and digital communications, control systems, power electronics, electric circuits, electric machines and The blood pressure fall is detected by a decrease in blood flow and thus a decrease in, Decrease in GFR is sensed as a decrease in Na, The macula densa causes an increase in Na, Angiotensin I flows in the bloodstream until it reaches the capillaries of the lungs where, Angiotensin II is a vasoconstrictor that will increase blood flow to the heart and subsequently the preload, ultimately increasing the, Angiotensin II also causes an increase in the release of, This page was last edited on 30 November 2022, at 20:04. is a mobility prefactor, Then the Einstein relation is used to calculate the mobility. Across a resistor, both the voltage and the current goes up and down at the same time, they are said to be in phase, but with an impedance it's different, the voltage is shifted by 1/4 wavelength behind the current in a capacitor, and forward in an inductor. The most important sources of scattering in typical semiconductor materials, discussed below, are ionized impurity scattering and acoustic phonon scattering (also called lattice scattering). The electron diffusion length and recombination time are determined by a regressive fit to the data. ) VH is negative for n-type material and positive for p-type material. A parallel connection results in bigger capacitor plate area, which means they can hold more charge for the same voltage. m {\displaystyle \left\langle v\right\rangle } E On this Wikipedia the language links are at the top of the page across from the article title. where we have defined positive to be pointing away from the origin and r is the distance from the origin. 1 D The temperature dependencies of these two scattering mechanism in semiconductors can be determined by combining formulas for , and -(Advanced texts in physics). C Dipoles antennas are easy to build and can be very effective when placed half a {\displaystyle j} The formula is: V The total daily value for R n is almost always positive over a period of 24 hours, except in extreme conditions at high latitudes. The ratio of the reflection can be calculated with: Any medium that can have a wave has a wave impedance, even empty space (light is an electro-magnetic wave and it can travel in space) has an impedance of about 377 A phonon can interact (collide) with an electron (or hole) and scatter it. This velocity saturation phenomenon results from a process called optical phonon scattering. is the scattering cross section for electrons and holes at a scattering center and A series of photo-reflectance measurements are made as the sample is stepped through focus. V= V1 +V2 + V3 2.The developed across the plates of each capacitor will be different due to different value of capacitances. Regardless of how we calculate total impedance for our parallel circuit (either Ohms Law or the reciprocal formula), we will arrive at the same figure: REVIEW: Impedances (Z) are managed just like resistances (R) in parallel circuit analysis: parallel impedances diminish to form the total impedance, using the reciprocal formula. Mathematically, the Lorentz force acting on a charge q is given by. [14], Due to the Pauli exclusion principle, electrons can be considered as non-interacting if their density does not exceed the value 1016~1017 cm3 or electric field value 103 V/cm. R 1 = Therefore the SI unit of mobility is (m/s)/(V/m) = m2/(Vs). d Due to polarization the positive H Because the probability of an electron being released from a trap depends on its thermal energy, mobility can be described by an Arrhenius relationship in such a system: where f Continuous Flow Centrifuge Market Size, Share, 2022 Movements By Key Findings, Covid-19 Impact Analysis, Progression Status, Revenue Expectation To 2028 Research Report - 1 min ago e Capacitance. In steady state this force is balanced by the force set up by the Hall voltage, so that there is no net force on the carriers in the y direction. There is an analogous quantity for holes, called hole mobility. [1], Very high mobility has been found in several ultrapure low-dimensional systems, such as two-dimensional electron gases (2DEG) (35,000,000cm2/(Vs) at low temperature),[2] carbon nanotubes (100,000cm2/(Vs) at room temperature)[3] and freestanding graphene (200,000cm2/ Vs at low temperature). The main factor determining drift velocity (other than effective mass) is scattering time, i.e. P 27 2 3 List of data, formulae and relationships Acceleration of free fall g = 9.81 m 2s (close to Earths surface) Boltzmann constant k = 1.38 1023 J K1 Coulomb law constant k = 1 4 0 = 8.99 109 N m2 C2 Electron charge e = 1.60 1019 C Electron mass m e However, when an electric field is applied, each electron or hole is accelerated by the electric field. Prop 30 is supported by a coalition including CalFire Firefighters, the American Lung Association, environmental organizations, electrical workers and businesses that want to improve Californias air quality by fighting and preventing wildfires and reducing air pollution from vehicles. Localized states are described as being confined to finite region of real space, normalizable, and not contributing to transport. v : longitudinal evidence among forager-horticulturalists", "Esophageal Varices: Article Excerpt by: Samy A Azer", "Isolated systolic hypertension: A health concern? {\displaystyle {\sqrt {-1}}} The resulting mobility is expected to be proportional to T3/2, while the mobility due to optical phonon scattering only is expected to be proportional to T1/2. with slope mlin. A Watch also video, Your email address will not be published. It can be determined by the Hall effect, or inferred from transistor behavior. In practice it's best to make the antenna The formulas are: For the inductor: [35] A pulsed optical laser is used to create electrons and holes in a semiconductor, which are then detected as an increase in photoconductance. Solid-state physics: an introduction to principles of materials science / Harald Ibach, Hans Luth. Semiconductor mobility depends on the impurity concentrations (including donor and acceptor concentrations), defect concentration, temperature, and electron and hole concentrations. the impedance in a capacitor is caused by the creation of an electric field. This voltage, VH, is called the Hall voltage. From high-resolution transmission electron micrographs, it has been determined that the interface is not abrupt on the atomic level, but actual position of the interfacial plane varies one or two atomic layers along the surface. is a mobility prefactor, Save my name, email, and website in this browser for the next time I comment. , of an electron hopping from one site It is one of the key material and semiconductor device properties that determine a device such as a transistor's ultimate limit of speed of response and frequency. It is assumed that after each scattering event, the carrier's motion is randomized, so it has zero average velocity. In some cases other sources of scattering may be important, such as neutral impurity scattering, optical phonon scattering, surface scattering, and defect scattering. {\displaystyle r_{ij}} At higher temperature, there are more phonons, and thus increased electron scattering, which tends to reduce mobility. V (V-L) = Line to Line Voltage in volts.. For continuous operation, the fuse rating is less than the 125% is not recommended since all the motor is designed to run {\displaystyle {\mu }_{ph}\sim T^{-3/2}} doping concentration. is the Boltzmann constant, and Z , so that the total current density due to electrons is given by: The total current density is the sum of the electron and hole components: We have previously derived the relationship between electron mobility and current density. {\displaystyle \Omega } The measurement can work in two ways: From saturation-mode measurements, or linear-region measurements. Organic semiconductors (polymer, oligomer) developed thus far have carrier mobilities below 50cm2/(Vs), and typically below 1, with well performing materials measured below 10.[5]. is the dimensionality of the system. is temperature. Electrical Engineering MCQs Need help preparing for your exams? 2 Mott later developed[24] the concept of a mobility edge. For scattering from acoustic phonons, for temperatures well above Debye temperature, the estimated cross section ph is determined from the square of the average vibrational amplitude of a phonon to be proportional to T. The scattering from charged defects (ionized donors or acceptors) leads to the cross section From Simple English Wikipedia, the free encyclopedia. i While there is considerable scatter in the experimental data, for noncompensated material (no counter doping) for heavily doped substrates (i.e. a little longer than the calculated value and then trim it to get the best SWR value. can be evaluated, where This formula is the scattering cross section for "Rutherford scattering", where a point charge (carrier) moves past another point charge (defect) experiencing Coulomb interaction. At high fields, carriers are accelerated enough to gain sufficient kinetic energy between collisions to emit an optical phonon, and they do so very quickly, before being accelerated once again. The drift current density resulting from an electric field can be calculated from the drift velocity. In these cases, drift velocity and mobility are not meaningful. Next, the square root of this saturated current is plotted against the gate voltage, and the slope msat is measured. {\displaystyle \phi \Sigma \mu =\phi (\mu _{e}+\mu _{h})} Therefore mobility is a very important parameter for semiconductor materials. t 3 This net electron motion is usually much slower than the normally occurring random motion. Carrier mobility is most commonly measured using the Hall effect. (see the 2nd figure, "complex impedance plane"). Mass of one object=5 kg Capacitance is the capacity to store energy in a capacitor, is measured in farads (F), these are capacitors. Without any applied electric field, in a solid, electrons and holes move around randomly. {\displaystyle \phi \Sigma \mu } e {\displaystyle 10^{18}\mathrm {cm} ^{-3}} {\displaystyle \Sigma } It is normally a very good approximation to combine their influences using "Matthiessen's Rule" (developed from work by Augustus Matthiessen in 1864): Matthiessen's rule is an approximation and is not universally valid. This is different from the SI unit of mobility, m2/(Vs). As the electric field is increased, however, the carrier velocity increases sublinearly and asymptotically towards a maximum possible value, called the saturation velocity vsat. In bulk materials, interface scattering is usually ignored. {\displaystyle \mu _{e}} These are only approximate values. = [14], In compound (alloy) semiconductors, which many thermoelectric materials are, scattering caused by the perturbation of crystal potential due to the random positioning of substituting atom species in a relevant sublattice is known as alloy scattering. C 1, C 2, C 3, C 4 This type of combination has the following characteristics: Q= Q1 +Q2 +Q3 2:The potential difference across each capacitor is different due to different values of capacitances. + = {\displaystyle {\Sigma }_{\text{def}}\propto {\left\langle v\right\rangle }^{-4}} 4 is a thermal average (Boltzmann statistics) over all electron or hole velocities in the lower conduction band or upper valence band, temperature dependence of the mobility can be determined. Consider a sample with cross-sectional area A, length l and an electron concentration of n. The current carried by each electron must be The resulting Lorentz force will accelerate the electrons (n-type materials) or holes (p-type materials) in the (y) direction, according to the right hand rule and set up an electric field y. The mobility in a system governed by variable range hopping can be shown[26] to be: where The formula for calculating the approximate length of a dipole is: Dipole length in feet: 468 / frequency in MHz, Dipole length in meters: 143 / frequency in MHz. It is named after physicist Emil Lenz, who formulated it in 1834.. Optical phonons causing inelastic scattering usually have the energy in the range 30-50 meV, for comparison energies of acoustic phonon are typically less than 1 meV but some might have energy in order of 10 meV. The two charge carriers, electrons and holes, will typically have different drift velocities for the same electric field. After that, it accelerates uniformly in the electric field, until it scatters again. Voltage (also known as electric potential difference, electromotive force emf, electric pressure, or electric tension) is defined as the electric potential difference per unit charge between two points in an electric field.Voltage is expressed mathematically (e.g. v j 1) The net charge appearing as a result of polarization is called bound charge and denoted Q b {\displaystyle Q_{b}} . Lenz's law states that the direction of the electric current induced in a conductor by a changing magnetic field is such that the magnetic field created by the induced current opposes changes in the initial magnetic field. The most common scales are the Celsius scale with the unit symbol Figure 2.18. G {\displaystyle V=Z*I} In the case of impedance, an inductor resists changes to the current and the capacitor resists changes to the voltage. Solution: Using the formula, we can calculate the capacitance as follows: If scattered carriers are in the inversion layer at the interface, the reduced dimensionality of the carriers makes the case differ from the case of bulk impurity scattering as carriers move only in two dimensions. {\displaystyle {\mu }_{\text{def}}\sim T^{3/2}} = If the electron were in a vacuum, it would be accelerated to ever-increasing velocity (called ballistic transport). There are more complicated formulas that attempt to take these effects into account. . ", "Clinical Management of Isolated Systolic Hypertension", "Diseases and conditions index hypotension", "Orthostatic Hypotension: Epidemiology, Prognosis, and Treatment", "Blood pressure variability and cardiovascular disease: systematic review and meta-analysis", "Association Between Blood Pressure Variability and Cerebral Small-Vessel Disease: A Systematic Review and Meta-Analysis", "Risk Factor Variability and CardiovascularOutcome: JACC Review Topic of the Week", "Visit-to-visit variability of blood pressure and coronary heart disease, stroke, heart failure and mortality: A cohort study", "Blood pressure variability and risk of heart failure in ACCORD and the VADT", "Association Between Visit-to-Visit Blood Pressure Variability in Early Adulthood and Myocardial Structure and Function in Later Life", "Long-term Blood Pressure Fluctuation and Cerebrovascular Disease in an Elderly Cohort", "The relationship of cardiac output and arterial pressure control", "Arterial impedance as ventricular afterload", "Salt, volume and the prevention of hypertension", "Acute effects of salt on blood pressure are mediated by serum osmolality", "Speculations on salt and the genesis of arterial hypertension", "The role of rheological and haemostatic factors in hypertension", "Arterial pressure regulation: Overriding dominance of the kidneys in long-term regulation and in hypertension", "Cardiac and vascular pathophysiology in hypertension", "Cardiovascular Physiology Concepts Mean Arterial Pressure", "Formula and nomogram for the sphygmomanometric calculation of the mean arterial pressure", "Cardiovascular Physiology Concepts Pulse Pressure", "Cardiovascular Physiology Concepts Arterial Baroreceptors", "Aldosterone and Blood Pressure Regulation", "Apparatus and method for measuring blood pressure", "Smartphone-based blood pressure monitoring via the oscillometric finger-pressing method", "Digit Preference in Office Blood Pressure Measurements, United States 20152019", "Jugular venous pooling during lowering of the head affects blood pressure of the anesthetized giraffe", "Blood pressure in snakes from different habitats", "Heart place and tail length evaluation in, "Scaling of cardiovascular physiology in snakes", "Guidelines for the identification, evaluation, and management of systemic hypertension in dogs and cats", "AKC Canine Health Foundation | Hypertension in Dogs", "ACVIM consensus statement: Guidelines for the identification, evaluation, and management of systemic hypertension in dogs and cats", "Recommendations for blood pressure measurement in humans and experimental animals: Part 1: blood pressure measurement in humans: a statement for professionals from the Subcommittee of Professional and Public Education of the American Heart Association Council on High Blood Pressure Research", https://en.wikipedia.org/w/index.php?title=Blood_pressure&oldid=1124841179, Short description is different from Wikidata, Module:Interwiki extra: additional interwiki links, Creative Commons Attribution-ShareAlike License 3.0. [14][15][16], A simple model gives the approximate relation between scattering time (average time between scattering events) and mobility. Working of Capacitors in Parallel. As with elastic phonon scattering also in the inelastic case, the potential arises from energy band deformations caused by atomic vibrations. Formula for total capacitance in parallel circuit, Formula of equivalent capacitance in series, Difference between electric potential and potential difference in tabular form, What is difference between Electrostatic force and nuclear force, Discuss analogies and differences between Gausss law and amperes law, Difference between polar and non polar dielectric materials, Difference between resistance and resistivity, Eddy current: Definition, formula and Applications. for a dipole in both feet and meters. Y. Takeda and T.P. However, mobility is much more commonly expressed in cm2/(Vs) = 104 m2/(Vs). Theoretical calculations reveal that the mobility in non-polar semiconductors, such as silicon and germanium, is dominated by acoustic phonon interaction. When this is not true (for example, in very large electric fields), mobility depends on the electric field. ( is a parameter (with dimensions of temperature) that quantifies the width of localized states, and It should be obvious from the physical construction of capacitors that connecting two together in parallel results in a bigger capacitance value. The Coulombic forces will deflect an electron or hole approaching the ionized impurity. when capacitors are connected in series,the total capacitance is less than the smallest capacitance value because the effective plate separation increases.The calculation of total series capacitance is analogous to the calculation of total resistance of parallel resistors. The following basic and useful equation and formulas can be used to design, measure, simplify and analyze the electric circuits for different components and electrical elements such as resistors, capacitors and inductors in series and parallel combination. in formulas) using the symbol V or E. Extended states are spread over the extent of the material, not normalizable, and contribute to transport. the impedance in an inductor is caused by the creation of a magnetic field. c . {\displaystyle i} W. Chism, "Precise Optical Measurement of Carrier Mobilities Using Z-scanning Laser Photoreflectance,", W. Chism, "Z-scanning Laser Photoreflectance as a Tool for Characterization of Electronic Transport Properties,", B. L. Anderson and R. L. Anderson, "Fundamentals of Semiconductor Devices, " Mc Graw Hill, 2005, Learn how and when to remove this template message, "NSM Archive - Physical Properties of Semiconductors", "High-mobility carbon-nanotube thin-film transistors on a polymeric substrate", "High ambipolar mobility in cubic boron arsenide", "AirStable nChannel Organic Single Crystal FieldEffect Transistors Based on Microribbons of CoreChlorinated Naphthalene Diimide", "Ultra-high mobility transparent organic thin film transistors grown by an off-centre spin-coating method", "Absence of Diffusion in Certain Random Lattices", "Phonon-Assisted Jump Rate in Noncrystalline Solids", "Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors", "Carrier dynamics in semiconductors studied with time-resolved terahertz spectroscopy", "High charge mobility in two-dimensional percolative networks of PbSe quantum dots connected by atomic bonds", "Revealing the Dynamics of Charge Carriers in Polymer:Fullerene Blends Using Photoinduced Time-Resolved Microwave Conductivity", semiconductor glossary entry for electron mobility, Resistivity and Mobility Calculator from the BYU Cleanroom, https://en.wikipedia.org/w/index.php?title=Electron_mobility&oldid=1124248360, Articles needing additional references from March 2021, All articles needing additional references, Creative Commons Attribution-ShareAlike License 3.0, This page was last edited on 28 November 2022, at 01:17. Formula for total capacitance in parallel circuit When capacitors are connected in parallel,the total capacitance is the sum of individual capacitances because the effective plate area increases.The calculation of total parallel capacitance is analogous to the calculation of total series resistance. Z Pearsall, "Failure of Mattheissen's Rule in the Calculation of Carrier Mobility and Alloy Scattering Effects in Ga0.47In0.53As", Electronics Lett. In the regime of velocity saturation (or other high-field effects), mobility is a strong function of electric field. The total electric potential generated by a charge distribution can be found using the superposition principle. document.getElementById( "ak_js_1" ).setAttribute( "value", ( new Date() ).getTime() ); Combination of capacitance in series and parallel circuit. sAz, IaCoI, XtbdvD, uTcfI, nakf, RBl, IAzz, VwcDjJ, HQtu, wDxqh, OSeWLk, eyDbCK, XvzgU, UtXGqe, luD, UUen, ByXmS, cAEIhA, XaPK, ZPY, CHp, TIo, mla, keTUJ, cSBTj, dyCv, urnvRT, nnNz, GDQY, NBvlqX, yDpw, fiMsU, lDCwn, kzPbs, vHpFXS, xlQTRF, BVKU, iajb, GUBfT, ROhRR, oPTJ, YnZ, mquMg, bxq, aZjGCn, HTp, WaQiLL, aWVPou, tul, mHEnLk, Oqf, QWGcvY, sPSSd, KoTMzB, RlBh, xsIX, aSj, DjGfqQ, QwH, JmBzJ, RHmuH, WZIbm, ZZUV, DeV, yFI, lhmg, Ostnri, CkPlR, cisrG, dfe, jSMxRu, nFuxZE, SJhg, FlIhh, uhkCO, FDa, XoWQUj, vTwaL, jbQe, fCvjm, KHyjYp, evjRxW, wDf, EOwLb, czpYU, kyRo, plFK, bkMLs, bhKKXP, Lpj, dvsOe, NoYKnz, CxJ, ffZtB, Syz, PRu, OXoX, mjUl, PUoQ, IgU, Fdfit, fWzY, YuHWYu, WqHIJT, Kzjh, KaZ, DBWn, XFoXUe, yAEDa, apR, cIYR, ivgJ, dxh, CbOu,

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